دیتاشیت FDB045AN08A0-F085
مشخصات دیتاشیت
| نام دیتاشیت | FDB045AN08A0-F085 |
|---|---|
| حجم فایل | 1177.029 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت FDB045AN08A0-F085 |
FDB045AN08A0-F085 Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDB045AN08A0-F085
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 310W
- Total Gate Charge (Qg@Vgs): 92nC@0~10V
- Drain Source Voltage (Vdss): 75V
- Input Capacitance (Ciss@Vds): 6.6nF@25V
- Continuous Drain Current (Id): 19A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 240pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@10V,80A
- Package: TO-263AB
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101, PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: FDB045
- detail: N-Channel 75V 19A (Ta) 310W (Tc) Surface Mount TO-263AB
